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 DG308B/309B
Vishay Siliconix
Improved Quad CMOS Analog Switches
FEATURES
D D D D D D D D "22-V Supply Voltage Rating CMOS Compatible Logic Low On-Resistance--rDS(on): 45 W Low Leakage--ID(on): 20 pA Single Supply Operation Possible Extended Temperature Range Fast Switching--tON: < 200 ns Low Glitching--Q: 1 pC
BENEFITS
D D D D D D D Wide Analog Signal Range Simple Logic Interface Higher Accuracy Minimum Transients Reduced Power Consumption Superior to DG308A/309 Space Savings (TSSOP)
APPLICATIONS
D D D D D D D Industrial Instrumentation Test Equipment Communications Systems Disk Drives Computer Peripherals Portable Instruments Sample-and-Hold Circuits
DESCRIPTION
The DG308B/309B analog switches are highly improved versions of the industry-standard DG308A/309. These devices are fabricated in Vishay Siliconix' proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. switching transients. The DG308B and DG309B can handle up to "22-V input signals. An epitaxial layer prevents latchup.
All devices feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes
The DG308B is a normally open switch and the DG309B is a normally closed switch. (See Truth Table.)
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG308B
Dual-In-Line, SOIC and TSSOP
TRUTH TABLE
Logic DG308B
OFF ON Logic "0" v 3.5V Logic "1" w 11 V
DG309B
ON OFF
IN1 D1 S1 V- GND S4 D4 IN4
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
IN2 D2 S2 V+ NC S3 D3 IN3
0 1
ORDERING INFORMATION
Temp Range Package
16-Pin Plastic DIP -40 to 85_C 40 16-Pin Narrow SOIC 16-Pin TSSOP
Part Number
DG308BDJ DG309BDJ DG308BDY DG309BDY DG308BDQ DG309BDQ DG308BAK DG308BAK/883 DG309BAK DG309BAK/883
Top View -55 to 125_C 55 16-Pin CerDIP 16 Pi C DIP
Document Number: 70047 S-52896--Rev. E, 14-Jul-97
www.vishay.com S FaxBack 408-970-5600
4-1
DG308B/309B
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V- V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 30 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (AK, Suffix) . . . . . . . . . . . . . . . . . -65 to 150_C (DJ, DY, DQ Suffix) . . . . . . . . . . -65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow SOIC and TSSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW 16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C e. Derate 12 mW/_C above 75_C
SPECIFICATIONSa
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance rDS(on) Match Source Off Leakage Current VANALOG rDS(on) DrDS(on) IS(off) ID(off) ID(on) VS = "14 V, VD = #14 V VD = "14 V, VS = #14 V VS = VD = "14 V VD = "10 V, IS = 1 mA Full Room Full Room Room Full Room Full Room Full 45 2 "0.01 "0.01 "0.02
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol
V+ = 15 V, V- = -15 V VIN = 11 V, 3.5 Vf
Tempb
Typc
Mind Maxd Mind Maxd
Unit
-15
15 85 100
-15
15 85 100
V W %
-0.5 -20 -0.5 -20 -0.5 -40
0.5 20 0.5 20 0.5 40
-0.5
-5
0.5 5 0.5 5 0.5 10 nA A
Drain Off Leakage Current
-0.5
-5 -0.5 -10
Drain On Leakage Current
Digital Control
Input Voltage High Input Voltage Low Input Current Input Capacitance VINH VINL IINH or IINL CIN VINH or VINL Full Full Full Room 5 -1
11 3.5 1
11 3.5
-1
V mA pF
1
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injection Source-Off Capacitance Drain-Off Capacitance Channel On Capacitance Off Isolation Channel-to-Channel Crosstalk tON tOFF Q CS(off) CD(off) CD(on) OIRR XTALK VS = 3 V, See Figure 2 Room Room Room Room VS = 0 V, f = 1 MHz VD = VS = 0 V, f = 1 MHz CL = 15 pF, RL = 50 W VS = 1 VRMS, f = 100 kHz Room Room Room Room 1 5 5 16 90 dB 95 pF F
200 150
200 150
ns
CL = 1000 pF, Vg= 0 V, Rg = 0 W
pC
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4-2
Document Number: 70047 S-52896--Rev. E, 14-Jul-97
DG308B/309B
Vishay Siliconix
SPECIFICATIONSa
Test Conditions Unless Specified Parameter Power Supply
Positive Supply Current Negative Supply Current Power Supply Range for Continuous Operation I+ VIN = 0 or 15 V I- VOP Room Full Room Full Full
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol
V+ = 15 V, V- = -15 V VIN = 11 V, 3.5 Vf
Tempb
Typc
Mind Maxd Mind Maxd
Unit
5 -1 -5
"4
1
5 -1 -5
1 mA
"22
"4
"22
V
SPECIFICATIONSa FOR SINGLE SUPPLY
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) VD = 3 V, 8 V, IS = 1 mA Full Room Full 90
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol
V+ = 12 V, V- = 0 V VIN = 11 V, 3.5 Vf
Tempb
Typc
Mind Maxd Mind Maxd
Unit
0
12 160 200
0
12 160 200
V W
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injection tON tOFF Q VS = 8 V, See Figure 2 CL = 1 nF, Vgen= 6 V, Rgen = 0 W Room Room Room 4
300 200
300 200
ns
pC
Power Supply
Positive Supply Current Negative Supply Current Power Supply Range for Continuous Operation I+ VIN = 0 or 12 V I- VOP Room Full Room Full Full
5 -1 -5 4
1
5 -1 -5
1 mA
44
4
44
V
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
Document Number: 70047 S-52896--Rev. E, 14-Jul-97
www.vishay.com S FaxBack 408-970-5600
4-3
DG308B/309B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply Voltages
110 r DS(on) Drain-Source On-Resistance ( W ) - 100 90 80 70 60 50 40 30 20 10 -20 -16 -12 -8 -4 0 4 8 12 16 20 VD - Drain Voltage (V) "20 V "10 V "15 V "5 V r DS(on) Drain-Source On-Resistance ( W ) - 100 90 80 70 60 50 40 30 20 10 0 -15 125_C 85_C 25_C -55_C V+ = 15 V V- = -15 V
rDS(on) vs. VD and Temperature
-10
-5
0
5
10
15
VD - Drain Voltage (V)
rDS(on) vs. VD and Single Power Supply Voltages
250 r DS(on) Drain-Source On-Resistance ( W ) - 225 200 V+ = 5 V
Leakage Currents vs. Analog Voltage
40 30 20 I S,I D - Current (pA) V+ = 22 V V- = -22 V TA = 25_C ID(on)
175 150 125 10 V 100 75 50 25 0 0 2 4 6 8 10 12 14 16 VD - Drain Voltage (V) 12 V 15 V 7V
10 0 -10 -20 -30 -40 -20
IS(off), ID(off)
-15
-10
-5
0
5
10
15
20
Analog Voltage
Leakage Currents vs. Temperature
1 nA V+ = 15 V V- = -15 V VS, VD = "14 V 30
QS, QD - Charge Injection vs. Analog Voltage
20
I S,I D - Current
Q - Charge (pC)
100 pA
10 V+ = 15 V V- = -15 V V+ = 12 V V- = 0 V -10
0
IS(off), ID(off) 10 pA
-20
1 pA -55
-35
-15
5
25
45
65
85
105 125
-30 -15
-10
-5
0
5
10
15
Temperature (_C)
Analog Voltage (V)
www.vishay.com S FaxBack 408-970-5600
4-4
Document Number: 70047 S-52896--Rev. E, 14-Jul-97
DG308B/309B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Off Isolation vs. Frequency
120 110 100 OIRR (dB) 90 RL = 50 W 80 70 60 50 40 10 k 100 k 1M 10 M V+ = 15 V V- = -15 V
f - Frequency (Hz)
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+ SX
Level Shift/ Drive INX
V- V+
DX GND V-
FIGURE 1.
TEST CIRCUITS
+15 V V+ VS = +3 V S IN 12 V GND V- RL 1 kW CL 35 pF Switch Output -15 V VO = VS RL RL + rDS(on) VO tON 90% D VO Logic Input 12 V 50% 0V tOFF tr <20 ns tf <20 ns
FIGURE 2. Switching Time
Document Number: 70047 S-52896--Rev. E, 14-Jul-97 www.vishay.com S FaxBack 408-970-5600
4-5
DG308B/309B
Vishay Siliconix
TEST CIRCUITS
C +15 V C VS
V+
+15 V
V+ S1 Rg = 50 W IN1 0V, 15 V IN GND V- C 50 W NC 0V, 15 V S2 D2 VO 50 W GND -15 V V- C D1 50 W
VS Rg = 50 W 0V, 15 V
S
D
VO
IN2
Off Isolation = 20 log
VS VO
C = RF bypass XTALK Isolation = 20 log
VS VO -15 V
FIGURE 3. Off Isolation
+15 V V+ S IN 12 V GND V- D VO CL 1000 pF
FIGURE 4. Channel-to-Channel Crosstalk
DVO VO
Rg
Vg
INX
ON
OFF
ON
DVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x DVO -15 V
FIGURE 5. Charge Injection
APPLICATIONS
30 pF +5 V VIN1 VL V+ +15 V +15 V + LM101A VIN2 - +15 V -15 V
DG419
CH GND V- -15 V Gain = RF + RG RG Gain 1 (x1) Gain 2 (x10) Gain 3 (x100) Gain 4 (x1000)
RF1 18 kW
RF1 9.9 kW
RF1 100 kW
DG308B
RG1 2 kW
RG2 100 W
RG3 100 W
V- Logic High = Switch On -15 V
GND
FIGURE 6. A Precision Amplifier with Digitally Programmable Inputs and Gains
www.vishay.com S FaxBack 408-970-5600 Document Number: 70047 S-52896--Rev. E, 14-Jul-97
4-6
DG308B/309B
Vishay Siliconix
APPLICATIONS
15 V V+
Logic Input Low = Sample High = Hold 1 kW +15 V -15 V - LM101A VIN + 5 MW 5.1 MW V- 30 pF -15 V 50 pF 200 W 1000 pF J500 J507 -15 V 2N4400 VOUT J202 +15 V
DG309B
Aquisition Time Aperature Time Sample to Hold Offset Droop Rate
= 25 ms = 1 ms = 5 mV = 5 mV/s
FIGURE 7. Sample-and-Hold
+15 V 160 C4 fC4 Select fC3 Select TTL Control fC2 Select fC1 Select 150 pF C3 Voltage Gain - dB 1500 pF C2 0.015 mF C1 0.15 mF 80 fC1 40 fC2 fC3 fC4 V1 120
0 V-
fL1
fL2
fL3
fL4
DG309B
GND -40 1 10 100 1k 10 k 100 k 1M
-15 V +15 V - R1 = 10 kW LM101A + R2 = 10 kW 30 pF
R3 = 1 MW
Frequency - Hz
-15 V
VOUT
AL (Voltage Gain Below Break Frequency) = 1 fC (Break Frequency) = 2pR3CX fL (Unity Gain Frequency) = Max Attenuation = rDS(on) 10 kW 1 2pR1CX [ -40 dB
R3 R1
= 100 (40 dB)
FIGURE 8. Active Low Pass Filter with Digitally Selected Break Frequency
Document Number: 70047 S-52896--Rev. E, 14-Jul-97 www.vishay.com S FaxBack 408-970-5600
4-7
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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